Active transmission control based on photonic-crystal MOS capacitor
نویسندگان
چکیده
Silicon nanophotonics has recently attracted great attention since it offers an opportunity for low cost opto-electronic solutions based on silicon complementary metal oxide semiconductor (MOS) technology. Photonic crystal (PhC) structures with slow photon effect are expected to play a key role in future large-scale ultra-compact photonic integrated circuits. A novel vertical-MOS-capacitor-based silicon PhC waveguide structure was proposed to achieve active transmission control via the free carrier plasma dispersion effect. We designed and fabricated a single-arm PhC waveguide with MOS gate defect using silicon-on-insulator (SOI) substrate and demonstrated that a defect mode was present in the infrared region. Plane wave expansion (PWE) method based simulation indicated that high group index of the fabricated PhC waveguide could be achieved near the transmission band edge. Further investigation demonstrated that such PhC MOS capacitor would be a good candidate to realize ultra-compact transmission control.
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تاریخ انتشار 2007